2n3771 Datasheet Pdf
2n3771 2n3772 high power npn silicon transistor stmicroelectronics preferred salestypes description the 2n3771, 2n3772. 2N3771 from Central Semiconductor Corp. Find the PDF Datasheet, Specifications and Distributor Information.
2N3771-D
Showing first 20 results. Zatrzymaj echo ebook. 2N3771 Catalog Datasheet MFG & Type PDF Document Tags 2n3772Abstract: 2n3771 SavantIC Semiconductor Product Specification 2N3771 Silicon NPN Power Transistors, VEBO Emitter-base voltage CONDITIONS 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 Open emitter Open base Open collector VALUE 50 100 40 60 5 7 2N3771 30 2N3772 20, 200 Tstg UNIT -65200 30 2N3771 7.5 2N3772 5.0 A A A 15 TC=25 A, VALUE 1.17 UNIT /W SavantIC Semiconductor Product Specification 2N3771 2N3772 Silicon - Original. 30.94 Kb 2N3771Abstract: 2n3772 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3771/D High Pow er NPN, Vdc - 2N3771 = 2.5 Adc @ V q e = 60 Vdc - 2N3772 2N 3771. 2N 3772 'Motorola Preferred Device, CEO VCEX VCB V EB 2N3771 40 50 50 5.0 30 30 7.5 15 150 0.855 2N3772 60 80 100 7.0 20 30 5.0 15, Junction to Case Symbol 0 jc 2N3771, 2N3772 1.17 Unit °C/W. Indicates JEDEC Registered Data, fu tu re use and best overall value. REV 7 M otorola, Inc.
1995 (M) M O TO RO LA 2N3771 - OCR Scan. 132.15 Kb 2N3771Abstract: 2N3772 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal, -3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Unit 2N3771, 2N3771/2N3772 THERMAL DATA R thj -ca se Thermal Resistance Junction-case Max o 1.17 C/W, 2N3771 V CB = 50 V for 2N3772 V CB = 100 V o for ALL V CB = 30 V T j = 150 C 2 5 10 mA mA STMicroelectronics Original. 30.65 Kb 2N3772Abstract: 2N3771 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in Jedec Jedec TO-3 metal, -3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t 2N3771 V, o C 1/4 2N3771/2N3772 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case, Current (V BE = -1.5V) for 2N3771 for 2N3772 for all V CB = 50 V V CB = 100 V VCB = 30 V T j = STMicroelectronics Original. 30.34 Kb 3771- ICAbstract: 2N3772 motorola Second Breakdown Current Capability IS/b = 3.75 Adc @ V c e = 40 Vdc - 2N3771 = 2.5 Adc @ V c e = 60 Vdc, S NPN SILIC O N 40 and 60 VOLTS 150 WATTS Symbol VCEO VCEX VCB Veb 'C 2N3771 40 50 50 5.0 30, b e.
2n3055 Datasheet
5 -0 Vdc, lc - 0) (V B E - 7.0 Vdc, lc - 0) 2N3771 2N3772 IC B O 2N3771 2N3772 lE B O 2N3771 2N3772 2N3771 2N3772 2N3771 2N3772 VC E O (su s) 40 60 50 80 45 70 - Symbol Min Max Unit Vdc -V c E X (su s) Vdc -V C E R (su s) Vdc - mAdc 'C E O 2N3771 - OCR Scan. 136.83 Kb diode cc 3053Abstract: 2n3772 EQUIVALENT, SILICON, HIGH-POWER, TYPES 2N3771 AND 2N3772, JAN, JANTX, AND JANTXV This specification is approved for, +200 -65 to +200 6 150 2N3771 1.17 29.2 6 150 2N3772 1.17 29.2 (1) Derate linearly 34.2, characteristics. Type hFE2 at VCE = 4 V dc IC = 15 A dc Max Min 2N3771 15 60 2N3772 (1) Pulsed (see, = 1 A dc f = 100 kHz IE = 0 100 kHz f 1 MHz 2N3771 2N3772 Limits s Min Max 6, Subgroup 2 Thermal impedance 2/ 3131 See 4.3.2 Breakdown voltage, collector to base 2N3771 - Original. 168.5 Kb 3771Abstract: ot 409 SGS-THOMSON Kl(gKLiM(s)!0(gS 2N3771 2N3772 HIGH POWER NPN SILICON TRANSISTOR. SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-base NPN transistors mounted in, 1- e o T, Ui °c 1/4 2N3771/2N3772 THERMAL DATA Rihj-case T h e rm a l R e s is ta, ^ 7# ftoaetigmiemroiies / r r sGS-m0MS0N 2N3771/2N3772 TO-3 MECHANICAL DATA mm in c h, 2N3771/2N3772 Irrformation furnished is believed to be accurate and reliable. However, SGS-THOMSON - OCR Scan.